64-1389-55 ［Discontinued］SI7900AEDN-T1-GE3 Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:36 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.5 W
- Height:1.07mm
- CODE No.:165-6339
| Order No. | 64-1389-55 | |
|---|---|---|
| Model No. | SI7900AEDN-T1-GE3 | |
| Standard price |
JPY: 411,000
USD: 2,576.32
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |