64-1389-51 [Discontinued]SI7232DN-T1-GE3 Dual N-Channel MOSFET, 24 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7232DN-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:24 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:24 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:23 W
- Dimensions:3.15 x 3.15 x 1.07mm
- CODE No.:165-6218
| Order No. | 64-1389-51 | |
|---|---|---|
| Model No. | SI7232DN-T1-GE3 | |
| Standard price |
JPY: 162,120
USD: 1,016.24
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI7232DN-T1-GE3 Dual N-Channel MOSFET, 24 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7232DN-T1-GE3](https://aimg.as-1.co.jp/c/64/1389/51/64138951.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)