64-1389-39 ［Discontinued］SI5517DU-T1-GE3 Dual N/P-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay SI5517DU-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(20pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:3.7 A, 7.2 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:55 mΩ, 131 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:PowerPAK ChipFET
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:8.3 W
- Width:1.98mm
- CODE No.:818-1334
| Order No. | 64-1389-39 | |
|---|---|---|
| Model No. | SI5517DU-T1-GE3 | |
| Standard price |
JPY: 2,600
USD: 16.18
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(20pieces) | |
|
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| Stock in Japan | - | |