64-1389-37 ［Discontinued］SI5513CDC-T1-GE3 Dual N/P-Channel MOSFET, 3 A, 3.5 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5513CDC-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:3 A, 3.5 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:85 mΩ, 255 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:1206 ChipFET
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-6330
| Order No. | 64-1389-37 | |
|---|---|---|
| Model No. | SI5513CDC-T1-GE3 | |
| Standard price |
JPY: 93,000
USD: 578.65
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |