Vishay

64-1389-33 SI5418DU-T1-GE3 N-Channel MOSFET, 11.6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5418DU-T1-GE3

Features

  • N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:11.6 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:18.5 mΩ
  • Minimum Gate Threshold Voltage:1.2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:PowerPAK ChipFET
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:31 W
  • Maximum Operating Temperature:+150 °C
  • CODE No.:165-6328
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Order No. 64-1389-33
Model No. SI5418DU-T1-GE3
Standard price JPY: 324,000 USD: 2,015.93
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(3000pieces)
Stock in Japan
Supplier Stock