64-1389-32 SI5419DU-T1-GE3 P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:9.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:33 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK ChipFET
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:31 W
- Transistor Material:Si
- CODE No.:818-1312
| Order No. | 64-1389-32 | |
|---|---|---|
| Model No. | SI5419DU-T1-GE3 | |
| Standard price |
JPY: 1,960
USD: 12.20
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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