64-1389-30 [Discontinued]SI4835DDY-T1-GE3 P-Channel MOSFET, 10.5 A, 30 V, 8-Pin SOIC Vishay SI4835DDY-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:10.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:30 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5.6 W
- Maximum Operating Temperature:+150 °C
- CODE No.:818-1295
| Order No. | 64-1389-30 | |
|---|---|---|
| Model No. | SI4835DDY-T1-GE3 | |
| Standard price |
JPY: 2,160
USD: 13.54
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI4835DDY-T1-GE3 P-Channel MOSFET, 10.5 A, 30 V, 8-Pin SOIC Vishay SI4835DDY-T1-GE3](https://aimg.as-1.co.jp/c/64/1389/30/64138929.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)