64-1389-28 [Discontinued]SI4712DY-T1-GE3 N-Channel MOSFET, 14.6 A, 30 V SkyFET, 8-Pin SOIC Vishay SI4712DY-T1-GE3
Features
- N-Channel MOSFET, Plus Integrated Schottky (SkyFET®), Vishay Semiconductor
Spec
- Quantity:1set(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:14.6 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:16.5 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5 W
- Transistor Material:Si
- CODE No.:818-1289
| Order No. | 64-1389-28 | |
|---|---|---|
| Model No. | SI4712DY-T1-GE3 | |
| Standard price |
JPY: 1,820
USD: 11.32
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(20pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI4712DY-T1-GE3 N-Channel MOSFET, 14.6 A, 30 V SkyFET, 8-Pin SOIC Vishay SI4712DY-T1-GE3](https://aimg.as-1.co.jp/c/64/1389/28/64138928.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)