64-1378-63 Nexperia PBHV8118T,215 NPN Transistor, 1 A, 180 V, 3-Pin SOT-23 PBHV8118T,215
Features
- Low Saturation Voltage NPN Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Spec
- Quantity:1bag(30pieces)
- Transistor Type:NPN
- Maximum DC Collector Current:1 A
- Maximum Collector Emitter Voltage:180 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Maximum Power Dissipation:300 mW
- Minimum DC Current Gain:100
- Transistor Configuration:Single
- Maximum Collector Base Voltage:400 V
- Maximum Emitter Base Voltage:6 V
- Maximum Operating Frequency:100 MHz
- Pin Count:3
- Number of Elements per Chip:1
- Width:1.4mm
- CODE No.:816-0649
| Order No. | 64-1378-63 | |
|---|---|---|
| Model No. | PBHV8118T,215 | |
| Standard price |
JPY: 2,670
USD: 16.74
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(30pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|