64-1373-29 SIHFBC30AS-GE3 N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30AS-GE3
Features
- N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.6 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:2.2 Ω
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:74 W
- Width:9.65mm
- CODE No.:165-6093
| Order No. | 64-1373-29 | |
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| Model No. | SIHFBC30AS-GE3 | |
| Standard price |
JPY: 11,100
USD: 69.06
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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