64-1372-98 SIHF640L-GE3 N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3
Features
- N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:18 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:180 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:I2PAK (TO-262)
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:130 W
- Width:4.83mm
- CODE No.:815-2635
| Order No. | 64-1372-98 | |
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| Model No. | SIHF640L-GE3 | |
| Standard price |
JPY: 4,980
USD: 30.99
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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