64-1372-93 SIHF620S-GE3 N-Channel MOSFET, 5.2 A, 200 V, 3-Pin D2PAK Vishay SIHF620S-GE3
Features
- N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.2 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:800 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:50 W
- Dimensions:10.67 x 9.65 x 4.83mm
- CODE No.:145-1709
| Order No. | 64-1372-93 | |
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| Model No. | SIHF620S-GE3 | |
| Standard price |
JPY: 9,950
USD: 62.37
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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