64-1372-91 SIHF630STRL-GE3 N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK Vishay SIHF630STRL-GE3
Features
- N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
Spec
- Quantity:1set(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:400 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:74 W
- Typical Turn-On Delay Time:9.4 ns
- CODE No.:165-5995
| Order No. | 64-1372-91 | |
|---|---|---|
| Model No. | SIHF630STRL-GE3 | |
| Standard price |
JPY: 171,000
USD: 1,063.96
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(800pieces) | |
| Stock in Japan |
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| Supplier Stock |
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