64-1371-16 ［Discontinued］Nexperia PBSS5580PA,115 PNP Transistor, 4 A, 80 V, 3-Pin HUSON PBSS5580PA,115
Features
- Low Saturation Voltage PNP Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Spec
- Quantity:1set(3000pieces)
- Transistor Type:PNP
- Maximum DC Collector Current:4 A
- Maximum Collector Emitter Voltage:80 V
- Package Type:HUSON
- Mounting Type:Surface Mount
- Maximum Power Dissipation:500 mW
- Minimum DC Current Gain:70
- Transistor Configuration:Single
- Maximum Collector Base Voltage:-80 V
- Maximum Emitter Base Voltage:-7 V
- Maximum Operating Frequency:100 MHz
- Pin Count:3
- Number of Elements per Chip:1
- Dimensions:2.1 x 2.1 x 0.65mm
- CODE No.:165-9988
| Order No. | 64-1371-16 | |
|---|---|---|
| Model No. | PBSS5580PA,115 | |
| Standard price |
JPY: 59,200
USD: 371.09
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |