64-1363-76 SISS23DN-T1-GE3 P-Channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISS23DN-T1-GE3
Features
- P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:27 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:11.5 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:57 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-6922
| Order No. | 64-1363-76 | |
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| Model No. | SISS23DN-T1-GE3 | |
| Standard price |
JPY: 207,000
USD: 1,298.46
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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