64-1363-73 ［Discontinued］SIS430DN-T1-GE3 N-Channel MOSFET, 21 A, 25 V, 8-Pin PowePAK 1212 Vishay SIS430DN-T1-GE3
Features
- N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:21 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:6.9 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowePAK 1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:52 W
- Typical Turn-On Delay Time:20 ns
- CODE No.:814-1308
| Order No. | 64-1363-73 | |
|---|---|---|
| Model No. | SIS430DN-T1-GE3 | |
| Standard price |
JPY: 770
USD: 4.83
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(10pieces) | |
|
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| Stock in Japan | - | |