64-1363-71 ［Discontinued］SIS415DNT-T1-GE3 P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212 Vishay SIS415DNT-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:22 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:9.5 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:52 W
- Typical Turn-Off Delay Time:83 ns
- CODE No.:814-1304
| Order No. | 64-1363-71 | |
|---|---|---|
| Model No. | SIS415DNT-T1-GE3 | |
| Standard price |
JPY: 2,590
USD: 16.12
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(20pieces) | |
|
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| Stock in Japan | - | |