64-1363-69 ［Discontinued］SIRA18DP-T1-GE3 N-Channel MOSFET, 15.5 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay SIRA18DP-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:15.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:12 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:14.7 W
- Width:5mm
- CODE No.:814-1291
| Order No. | 64-1363-69 | |
|---|---|---|
| Model No. | SIRA18DP-T1-GE3 | |
| Standard price |
JPY: 1,240
USD: 7.78
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |