64-1363-63 SIR416DP-T1-GE3 N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO Vishay SIR416DP-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:27 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:4.2 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:69 W
- Number of Elements per Chip:1
- CODE No.:814-1272
| Order No. | 64-1363-63 | |
|---|---|---|
| Model No. | SIR416DP-T1-GE3 | |
| Standard price |
JPY: 2,610
USD: 16.37
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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