64-1363-49 ［Discontinued］SIA921EDJ-T1-GE3 Dual P-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay SIA921EDJ-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.5 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:98 mΩ
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOT-363 (SC-70)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:7.8 W
- Number of Elements per Chip:2
- CODE No.:814-1235
| Order No. | 64-1363-49 | |
|---|---|---|
| Model No. | SIA921EDJ-T1-GE3 | |
| Standard price |
JPY: 1,280
USD: 8.02
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |