64-1356-43 [Discontinued]SIHLR120TR-GE3 N-Channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK Vishay SIHLR120TR-GE3
Features
- N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:7.7 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:380 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-10 V, +10 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:42 W
- Transistor Material:Si
- CODE No.:813-0720
| Order No. | 64-1356-43 | |
|---|---|---|
| Model No. | SIHLR120TR-GE3 | |
| Standard price |
JPY: 1,280
USD: 7.96
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SIHLR120TR-GE3 N-Channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK Vishay SIHLR120TR-GE3](https://aimg.as-1.co.jp/c/64/1356/43/64135642.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)