64-1350-84 ［Discontinued］SI4666DY-T1-GE3 N-Channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC Vishay SI4666DY-T1-GE3
Features
- N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:16.5 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:14 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5 W
- Typical Turn-On Delay Time:13 ns
- CODE No.:165-7257
| Order No. | 64-1350-84 | |
|---|---|---|
| Model No. | SI4666DY-T1-GE3 | |
| Standard price |
JPY: 213,000
USD: 1,335.17
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
|
||
| Stock in Japan | - | |