64-1350-83 SI4599DY-T1-GE3 Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:4.7 A, 6.8 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:42.5 mΩ, 62 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3 W, 3.1 W
- Transistor Material:Si
- CODE No.:812-3233
| Order No. | 64-1350-83 | |
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| Model No. | SI4599DY-T1-GE3 | |
| Standard price |
JPY: 3,270
USD: 20.50
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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