64-1350-82 SI4599DY-T1-GE3 Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:4.7 A, 6.8 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:42.5 mΩ, 62 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3 W, 3.1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-7255
| Order No. | 64-1350-82 | |
|---|---|---|
| Model No. | SI4599DY-T1-GE3 | |
| Standard price |
JPY: 215,000
USD: 1,337.73
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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