64-1350-80 [Discontinued]SI4501BDY-T1-GE3 Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC Vishay SI4501BDY-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:6.4 A, 12 A
- Maximum Drain Source Voltage:8 V, 30 V
- Maximum Drain Source Resistance:20 mΩ, 37 mΩ
- Minimum Gate Threshold Voltage:0.45V
- Maximum Gate Source Voltage:-20 V, -8 V, +20 V, +8 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.1 W, 4.5 W
- Typical Turn-On Delay Time:16 ns, 22 ns
- CODE No.:165-7254
| Order No. | 64-1350-80 | |
|---|---|---|
| Model No. | SI4501BDY-T1-GE3 | |
| Standard price |
JPY: 101,850
USD: 638.44
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI4501BDY-T1-GE3 Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC Vishay SI4501BDY-T1-GE3](https://aimg.as-1.co.jp/c/64/1350/80/64135080.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)