64-1350-77 SI4431CDY-T1-GE3 P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:7.2 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:49 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:4.2 W
- Typical Turn-Off Delay Time:23 ns
- CODE No.:165-7252
| Order No. | 64-1350-77 | |
|---|---|---|
| Model No. | SI4431CDY-T1-GE3 | |
| Standard price |
JPY: 206,000
USD: 1,291.29
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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