64-1350-76 ［Discontinued］SI4286DY-T1-GE3 Dual N-Channel MOSFET, 7 A, 40 V, 8-Pin SOIC Vishay SI4286DY-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:7 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:40 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.9 W
- Number of Elements per Chip:2
- CODE No.:812-3211
| Order No. | 64-1350-76 | |
|---|---|---|
| Model No. | SI4286DY-T1-GE3 | |
| Standard price |
JPY: 1,560
USD: 9.71
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |