64-1350-72 SI4178DY-T1-GE3 N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:33 mΩ
- Minimum Gate Threshold Voltage:1.4V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5 W
- Transistor Material:Si
- CODE No.:812-3205
| Order No. | 64-1350-72 | |
|---|---|---|
| Model No. | SI4178DY-T1-GE3 | |
| Standard price |
JPY: 2,690
USD: 16.74
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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