64-1350-71 SI4178DY-T1-GE3 N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:33 mΩ
- Minimum Gate Threshold Voltage:1.4V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5 W
- Typical Turn-On Delay Time:20 ns
- CODE No.:165-7249
| Order No. | 64-1350-71 | |
|---|---|---|
| Model No. | SI4178DY-T1-GE3 | |
| Standard price |
JPY: 166,000
USD: 1,032.85
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|