64-1350-69 SI4164DY-T1-GE3 N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC Vishay SI4164DY-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:3.9 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:6 W
- Length:5mm
- CODE No.:165-7275
| Order No. | 64-1350-69 | |
|---|---|---|
| Model No. | SI4164DY-T1-GE3 | |
| Standard price |
JPY: 410,000
USD: 2,551.02
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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