64-1350-63 ［Discontinued］SI3900DV-T1-GE3 Dual N-Channel MOSFET, 2 A, 20 V, 6-Pin TSOP Vishay SI3900DV-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:200 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:TSOP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:830 mW
- Number of Elements per Chip:2
- CODE No.:812-3170
| Order No. | 64-1350-63 | |
|---|---|---|
| Model No. | SI3900DV-T1-GE3 | |
| Standard price |
JPY: 2,010
USD: 12.51
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(20pieces) | |
|
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| Stock in Japan | - | |