64-1350-59 SI3477DV-T1-GE3 P-Channel MOSFET, 8 A, 12 V TrenchFET, 6-Pin TSOP Vishay SI3477DV-T1-GE3
Features
- P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:12 V
- Maximum Drain Source Resistance:33 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-10 V, +10 V
- Package Type:TSOP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:4.2 W
- Dimensions:3.1 x 1.7 x 1mm
- CODE No.:812-3160
| Order No. | 64-1350-59 | |
|---|---|---|
| Model No. | SI3477DV-T1-GE3 | |
| Standard price |
JPY: 3,010
USD: 18.87
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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