64-1350-53 [Discontinued]SI3410DV-T1-GE3 N-Channel MOSFET, 8 A, 30 V, 6-Pin TSOP Vishay SI3410DV-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:23 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSOP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:4.1 W
- Number of Elements per Chip:1
- CODE No.:812-3148
| Order No. | 64-1350-53 | |
|---|---|---|
| Model No. | SI3410DV-T1-GE3 | |
| Standard price |
JPY: 1,810
USD: 11.26
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI3410DV-T1-GE3 N-Channel MOSFET, 8 A, 30 V, 6-Pin TSOP Vishay SI3410DV-T1-GE3](https://aimg.as-1.co.jp/c/64/1350/53/64135052.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)