64-1350-50 SI2377EDS-T1-GE3 P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.5 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:165 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.8 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-6912
| Order No. | 64-1350-50 | |
|---|---|---|
| Model No. | SI2377EDS-T1-GE3 | |
| Standard price |
JPY: 129,000
USD: 808.63
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|