64-1350-47 SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1bag(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:67.5 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Number of Elements per Chip:1
- CODE No.:812-3139
| Order No. | 64-1350-47 | |
|---|---|---|
| Model No. | SI2365EDS-T1-GE3 | |
| Standard price |
JPY: 1,920
USD: 12.04
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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