64-1350-47 SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
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64-1350-47 SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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64-1350-47 SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
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特徴
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
仕様
- Quantity:1bag(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:67.5 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Number of Elements per Chip:1
- CODE No.:812-3139
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Order No.
64-1350-47
型番
SI2365EDS-T1-GE3
標準価格
JPY: 2,390
USD: 14.87
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数
1bag(50pieces)
Stock in Japan
Supplier Stock
64-1350-47 SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
特徴
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
仕様
- Quantity:1bag(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:67.5 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Number of Elements per Chip:1
- CODE No.:812-3139
| Order No. | 64-1350-47 | |
|---|---|---|
| 型番 | SI2365EDS-T1-GE3 | |
| 標準価格 |
JPY: 2,390
USD: 14.87
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| 入り数 | 1bag(50pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|