64-1350-46 SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:67.5 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Typical Turn-Off Delay Time:65 ns
- CODE No.:165-6934
| Order No. | 64-1350-46 | |
|---|---|---|
| Model No. | SI2365EDS-T1-GE3 | |
| Standard price |
JPY: 53,800
USD: 337.24
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|