64-1350-45 SI2367DS-T1-GE3 P-Channel MOSFET, 2.2 A, 20 V, 3-Pin SOT-23 Vishay SI2367DS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:2.2 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:130 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Length:3.04mm
- CODE No.:812-3136
| Order No. | 64-1350-45 | |
|---|---|---|
| Model No. | SI2367DS-T1-GE3 | |
| Standard price |
JPY: 4,310
USD: 26.82
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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