64-1350-43 SI2338DS-T1-GE3 N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay SI2338DS-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:33 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Transistor Material:Si
- CODE No.:165-6909
| Order No. | 64-1350-43 | |
|---|---|---|
| Model No. | SI2338DS-T1-GE3 | |
| Standard price |
JPY: 142,000
USD: 890.12
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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