64-1350-42 ［Discontinued］SI2337DS-T1-GE3 P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:1.75 A
- Maximum Drain Source Voltage:80 V
- Maximum Drain Source Resistance:303 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Transistor Material:Si
- CODE No.:165-7181
| Order No. | 64-1350-42 | |
|---|---|---|
| Model No. | SI2337DS-T1-GE3 | |
| Standard price |
JPY: 378,000
USD: 2,369.46
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |