64-1350-39 SI2304DDS-T1-GE3 N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2304DDS-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.6 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:75 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-6932
| Order No. | 64-1350-39 | |
|---|---|---|
| Model No. | SI2304DDS-T1-GE3 | |
| Standard price |
JPY: 78,700
USD: 489.67
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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