64-1350-38　［Discontinued］SI2329DS-T1-GE3 P-Channel MOSFET, 6 A, 8 V, 3-Pin SOT-23 Vishay　SI2329DS-T1-GE3

Features

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

Spec

Quantity:1set(20pieces)
Channel Type:P
Maximum Continuous Drain Current:6 A
Maximum Drain Source Voltage:8 V
Maximum Drain Source Resistance:120 mΩ
Minimum Gate Threshold Voltage:0.35V
Maximum Gate Source Voltage:-5 V, +5 V
Package Type:SOT-23 (TO-236)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.5 W
Typical Input Capacitance @ Vds:1485 pF @ -4 V
CODE No.:812-3114

Order No.	64-1350-38
Model No.	SI2329DS-T1-GE3
Standard price	JPY: 1,220 USD: 7.65 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1set(20pieces)

Stock in Japan	-

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