64-1350-37 ［Discontinued］SI2329DS-T1-GE3 P-Channel MOSFET, 6 A, 8 V, 3-Pin SOT-23 Vishay SI2329DS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:8 V
- Maximum Drain Source Resistance:120 mΩ
- Minimum Gate Threshold Voltage:0.35V
- Maximum Gate Source Voltage:-5 V, +5 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Dimensions:3.04 x 1.4 x 1.02mm
- CODE No.:165-6906
| Order No. | 64-1350-37 | |
|---|---|---|
| Model No. | SI2329DS-T1-GE3 | |
| Standard price |
JPY: 115,030
USD: 721.06
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |