64-1350-32 ［Discontinued］Si1965DH-T1-GE3 Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay Si1965DH-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:1.2 A
- Maximum Drain Source Voltage:12 V
- Maximum Drain Source Resistance:710 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.25 W
- Length:2.2mm
- CODE No.:812-3104
| Order No. | 64-1350-32 | |
|---|---|---|
| Model No. | Si1965DH-T1-GE3 | |
| Standard price |
JPY: 2,460
USD: 15.42
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(50pieces) | |
|
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| Stock in Japan | - | |