64-1350-31 ［Discontinued］SI1965DH-T1-GE3 Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay SI1965DH-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:1.2 A
- Maximum Drain Source Voltage:12 V
- Maximum Drain Source Resistance:710 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.25 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-6931
| Order No. | 64-1350-31 | |
|---|---|---|
| Model No. | SI1965DH-T1-GE3 | |
| Standard price |
JPY: 68,300
USD: 428.13
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |