64-1350-29 ［Discontinued］SI1926DL-T1-GE3 Dual N-Channel MOSFET, 370 mA, 60 V, 6-Pin SOT-363 Vishay SI1926DL-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:370 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:3 Ω
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:510 mW
- Dimensions:2.2 x 1.35 x 1mm
- CODE No.:145-2680
| Order No. | 64-1350-29 | |
|---|---|---|
| Model No. | SI1926DL-T1-GE3 | |
| Standard price |
JPY: 63,200
USD: 396.16
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |