64-1350-25 SI1922EDH-T1-GE3 Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:1.3 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:263 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.25 W
- Number of Elements per Chip:2
- CODE No.:165-6930
| Order No. | 64-1350-25 | |
|---|---|---|
| Model No. | SI1922EDH-T1-GE3 | |
| Standard price |
JPY: 102,000
USD: 639.38
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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