64-1350-19 ［Discontinued］SI1422DH-T1-GE3 N-Channel MOSFET, 4 A, 12 V, 6-Pin SOT-363 Vishay SI1422DH-T1-GE3
Features
- N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:4 A
- Maximum Drain Source Voltage:12 V
- Maximum Drain Source Resistance:36 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.8 W
- Typical Gate Charge @ Vgs:13.1 nC @ 8 V
- CODE No.:165-6903
| Order No. | 64-1350-19 | |
|---|---|---|
| Model No. | SI1422DH-T1-GE3 | |
| Standard price |
JPY: 93,300
USD: 585.25
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |