64-1350-14 ［Discontinued］Si1416EDH-T1-GE3 N-Channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363 Vishay Si1416EDH-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:77 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.8 W
- Maximum Operating Temperature:+150 °C
- CODE No.:812-3063
| Order No. | 64-1350-14 | |
|---|---|---|
| Model No. | Si1416EDH-T1-GE3 | |
| Standard price |
JPY: 1,130
USD: 7.08
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |