64-1350-11 ［Discontinued］SI1062X-T1-GE3 N-Channel MOSFET, 530 mA, 20 V, 3-Pin SOT-523 Vishay SI1062X-T1-GE3
Features
- N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:530 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:762 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-523 (SC-89)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:220 mW
- Number of Elements per Chip:1
- CODE No.:812-3044
| Order No. | 64-1350-11 | |
|---|---|---|
| Model No. | SI1062X-T1-GE3 | |
| Standard price |
JPY: 1,690
USD: 10.59
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
|
||
| Stock in Japan | - | |