64-1350-03 ［Discontinued］SI1025X-T1-GE3 Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SOT-523 Vishay SI1025X-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:135 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:8 Ω
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-523 (SC-89)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:250 mW
- Height:0.6mm
- CODE No.:165-6899
| Order No. | 64-1350-03 | |
|---|---|---|
| Model No. | SI1025X-T1-GE3 | |
| Standard price |
JPY: 131,000
USD: 821.16
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |